Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Stable Few-Layer Mos2 Rectifying Diodes Formed By Plasma-Assisted Doping

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Facile P-Doping of Few-Layer MoTe2 by Controllable Surface Oxidation Toward High-Performance Complementary Devices

Large Size Few-Layer Ambipolar MoS2 Metal-Oxide-Semiconductor Field Effect Transistors by Nitrogen Plasma Doping

High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition

Charge neutral MoS2 field effect transistors through oxygen plasma treatment

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

The Physics and Backward Diode Behavior of Heavily Doped Single Layer MoS2 Based P-N Junctions

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Controlled Gas Molecules Doping of Monolayer MoS2 Via Atomic-Layer-Deposited Al2O3 Films.

High Rectification Ratio Metal-Insulator-semiconductor Tunnel Diode Based on Single-Layer MoS2

Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices

Plasma-induced large-area N,Pt-doping and phase engineering of MoS<sub>2</sub> nanosheets for alkaline hydrogen evolution

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides