Abstract:The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here, we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS2) as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10^4. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency (EQE) of 25% and fast photoresponse < 15 {\mu}s. Since SWCNTs have a diverse range of electrical properties as a function of chirality, and since an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

The Physics and Backward Diode Behavior of Heavily Doped Single Layer MoS2 Based P-N Junctions

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Substitutional doping at S site of MoS2/G heterostructure: The influence on voltage-current and electronic characteristics

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

P-type polar transition of chemically doped multilayer MoS2 transistor

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Two-dimensional electronic transport and surface electron accumulation in MoS2

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Substitutionally Doped MoSe 2 for High‐Performance Electronics and Optoelectronics

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Lateral Monolayer MoSe2 -Wse2 P-N Heterojunctions with Giant Built-In Potentials.

Implementing Lateral MoSe 2 P-N Homojunction by Efficient Carrier-Type Modulation.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode