Implementing Lateral MoSe 2 P-N Homojunction by Efficient Carrier-Type Modulation.

Shuangqing Fan,Wanfu Shen,Chunhua An,Zhaoyang Sun,Sen Wu,Linyan Xu,Dong Sun,Xiaodong Hu,Daihua Zhang,Jing Liu

DOI: https://doi.org/10.1021/acsami.8b08422

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:High performance p-n junctions based on atomically thin two-dimensional (2D) materials are the fundamental building blocks for many nano-scale functional devices that are ideally for future electronic and optoelectronic applications. The lateral p-n homo-junctions outperform vertically stacked ones in terms of conveniently tunable band offset, however, the realization of lateral p-n homo-junctions usually require efficient carrier type modulation in a single 2D material flake, which remains a tech challenge. In this work, we have realized effective carrier type modulation in a single MoSe flake, and thus, a lateral MoSe p-n homo-junction is achieved by sequential treatment of air rapid thermal annealing and triphenylphosphine (PPh) solution coating. The rapid thermal annealing modulates MoSe flakes from naturally n-type doping to degenerated p-type doping and improves the hole mobility of the MoSe field effect transistors from 0.2 cm·V·s to 71.5 cm·V·s. Meanwhile, the n-doping of MoSe is increased by drop coating PPh solution on MoSe surface with increased electron mobility from 78.6 cm·V·s to 412.8 cm·V·s. The as-fabricated lateral MoSe p-n homojunction presents high rectification ratio of 10, ideality factor of 1.2 and enhanced photo-response of 0.67 A·W to visible light. This efficient carrier type modulation within a single MoSe flake enables its superb potentials in various functional devices.