Abstract:Abstract Silicon carbide (SiC) has been widely utilized in semiconductor industry for the development of high power electrical devices. Using chemical vapor deposition (CVD) to grow a thin epitaxial layer onto SiC substrate surface with orderly lattice arrangement, good surface morphology and low doping concentration is required. During epitaxial growth, the high reaction temperature and its distribution are generally difficult to measure and will affect the properties of epitaxial growth layer. This study presents a thermal-field testing method based on process temperature control rings (PTCRs) to measure the high temperature distribution inside the epitaxial growth reaction chamber, and to study the effects of reaction chamber structure and epitaxial growth parameters on the quality of epitaxial layer. The measurement accuracy of PTCRs was characterized using silicon melting experiments and the measuring principle of PTCRs was presented. The thermal field of the reaction chamber was then numerically simulated and compared with experimental results. The experiment results exhibit a temperature gradient of less than 0.4 °C/mm on surface, indicating good temperature uniformity. Epitaxial growth is an essential process in the fabrication of SiC devices, as it enables the production of layers with precise doping density and thickness. The SiC epitaxial growth experiments were conducted to study the effects of gas flow ratio and doping flow ratio of three inlet flow channels on the thickness and doping concentration distributions. The results demonstrated that the non-uniformity of thickness and doping concentration of epitaxial layer was below 1.5 % and 4.0 %, respectively.

Temperature Control During Chemical Vapor Deposition of Polycrystalline Silicon with Substrate Heating by Microwaves

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Low Temperature Silicon Epitaxy in a Single-Wafer RTP Reactor with Microwave Heating

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Chemical Vapor Deposition Of Silicon In A Lamp-Heated Reactor - Effects Of Heat Absorption, Emission, And Conduction

Accurate Temperature Monitoring Scheme For Microwave Annealing With Silicon Substrate

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

Thermal conductivity measurement of submicrometer-scale silicon dioxide films by an extended micro-Raman method

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor

Heat Transfer in a Novel Microwave Heating Device Coupled with Atomization Feeding

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Investigation of Resistivity Dependent Microwave Annealing on Si Substrates

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Rapid thermal processing with microwave heating

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Sub-wavelength Temperature Probing in Near-Field Laser Heating by Particles.