Abstract:As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this work are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and band structure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. The computer based simulations carried out are essentially based on DFT using NEGF formalism. A silicon nanowire has been modeled as PN diode (Zener Diode), PIN diode, PIP & NIN diode configurations by selectively doping the nanowire and simulated by biasing one end of the nanowire to ground and sweeping the other end of the nanowire from -1 V to 1 V to obtain the electrical characteristics of the respective diodes. In order to determine the effectiveness of the modeled diodes in silicon nanowire, the same diodes have been modeled using a germanium nanowire by selective doping and simulated in the same manner to obtain the electrical characteristics of the germanium nanowire based diodes which has been used as a reference to analyze the characteristics obtained using silicon nanowire. The modeled diodes are extremely small in dimension when compared to the conventional bulk silicon and germanium based diodes. This work is followed by modeling and simulation of a gate all around nanowire field effect transistor using two different gate dielectrics, followed by temperature dependence of the nanowire FET characteristics and the off state current and conductance variation using the two dielectrics.

Gate Coupling and Carrier Distribution in Silicon Nanowire/nanoribbon Transistors Operated in Electrolyte

Effects of Charge Screening and Surface Properties on Signal Transduction in Field Effect Nanowire Biosensors

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Nanotube and Nanowire Transistors

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte.

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors

Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing

Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes

Impact of surface charge density modulation on ion transport in heterogeneous nanochannels

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Dual gate controlled single electron effect in silicon nanowire transistors

Charge Trapping in Surface Accumulation Layer of Heavily Doped Junctionless Nanowire Transistors