Abstract:Ion-sensitive field-effect transistors (ISFETs)[1] offer a promising set of features for integrating sensor and readout electronics on the same chip, providing a portable and cost-effective sensing solution. Such sensors are label-free and convert chemical reactions into electrical signals via electrostatic gating of the FET by adsorbed chemical or biological species. During the past decade, the ISFET concept has been applied to nanoscale devices such as carbon nanotubes, graphene[2] or Si nanowires.[3, 4] Even though many exciting biosensing experiments have been reported, several key challenges are still limiting their wide-spread application. In particular, the miniaturization of the reference electrode[5] and resolving the stability and drift issues proved to be difficult tasks. Also, competing reactions at the sensor surface have to be taken into account as they limit the sensing performance and might lead to misreading.[6] Here, we discuss these and other issues related to sensing in an electrolyte environment based on our results using silicon nanowires[4-11] and graphene FETs[2, 12] as transducers. Several examples of specific detection of pH,[5, 6] sodium,[9] potassium,[12] and biomolecules in a reliable differential setup will be presented along with a new quantitative model for describing the competing reactions in an electrolyte environment.[6, 13] The application of these devices in the animal health sector for the diagnosis of bovine respiratory disease (BRD), which is a major cause of calf death, will also be addressed. 1. Bergveld, P., Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years. Sens. Actuators B, 2003. 88(1): p. 1-20. 2. Fu, W., et al., Graphene transistors are insensitive to pH changes in solution. Nano Lett., 2011. 11(9): p. 3597-3600. 3. Cui, Y., et al., Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species. Science, 2001. 293(5533): p. 1289-1292. 4. Knopfmacher, O., et al., Nernst Limit in Dual-Gated Si-Nanowire FET Sensors. Nano Lett., 2010. 10: p. 2268-2274. 5. Tarasov, A., et al., True reference nanosensor realized with silicon nanowires. Langmuir, 2012. 28(25): p. 9899-9905. 6. Tarasov, A., et al., Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors. ACS Nano, 2012. 6(10): p. 9291-9298. 7. Tarasov, A., et al., Signal-to-Noise Ratio in Dual-Gated Silicon Nanoribbon Field-Effect Sensors. Appl. Phys. Lett., 2011. 98(1): p. 012114. 8. Knopfmacher, O., et al., Silicon‐Based Ion‐Sensitive Field‐Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH. ChemPhysChem, 2012. 13(5): p. 1157-1160. 9. Wipf, M., et al., Selective sodium sensing with gold-coated silicon nanowire field-effect transistors in a differential setup. ACS Nano, 2013. 7(7): p. 5978-5983. 10. Bedner, K., et al., pH response of silicon nanowire sensors: impact of nanowire width and gate oxide. Sensors and Materials, 2013. 25(8): p. 567-576. 11. Bedner, K., et al., Investigation of the dominant 1/f noise source in silicon nanowire sensors. Sens. Actuators B, 2014. 191: p. 270-275. 12. Fu, W., et al., High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization. Nanoscale, 2013. 5(24): p. 12104-12110. 13. Stoop, R.L., et al., Competing Surface Reactions Limiting the Performance of Ion-Sensitive Field-Effect Transistors. ACS Appl. Mater. Interfaces, 2014. submitted.

Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte.

Effects of Charge Screening and Surface Properties on Signal Transduction in Field Effect Nanowire Biosensors

A two-terminal silicon nanoribbon field-effect pH sensor

Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes

The Role of Surface Charge and Binding Properties in Silicon-Based Field Effect Nanowire Biosensors

Impact of Gate Structure on the Electrophysiology Detection Behaviors for SOI Ion-Sensitive FETs

Competing surface reactions limiting the performance of ion-sensitive field-effect transistors

(Invited) Silicon Nanowire and Graphene Field-Effect Transistors for Sensing Applications

Gate Coupling and Carrier Distribution in Silicon Nanowire/nanoribbon Transistors Operated in Electrolyte

Comparing solution-gate and bottom-gate nanowire field-effect transistors on pH sensing with different salt concentrations and surface modifications

Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors.

Silicon-based nanoelectronic field-effect pH sensor with local gate control

Synergy of Ionic and Dipolar Effects by Molecular Design for pH Sensing beyond the Nernstian Limit

Nernst limit in dual-gated Si-nanowire FET sensors.

Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore

Silicon-based ion-sensitive field-effect transistor shows negligible dependence on salt concentration at constant pH.

Solution‐pH‐Modulated Rectification of Ionic Current in Highly Ordered Nanochannel Arrays Patterned with Chemical Functional Groups at Designed Positions

Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media

True reference nanosensor realized with silicon nanowires.

Ph Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide

Selective sodium sensing with gold-coated silicon nanowire field-effect transistors in a differential setup.