Abstract:Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

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The interaction between oxygen vacancies and doping atoms in ZnO

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Zn vacancy induced ferromagnetism in K doped ZnO

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Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

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Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

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Oxygen vacancy in ZnO- w phase: pseudohybrid Hubbard density functional study

The Structure of the [Zn_In - V_P] Defect Complex in Zn Doped InP

Studies of the Mechanism of Electrical Conduction in As-doped ZnO by Structural and Chemical-Bonding Analyses and First Principle Calculations

Zinc Vacancy Related Emission in Homoepitaxial N-doped ZnO Microrods

Oxygen vacancies: The origin of n-type conductivity in ZnO

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations

Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

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On‐site Correlation of P‐electron in D10 Semiconductor Zinc Oxide