Abstract:Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

Interaction of zinc interstitial with oxygen vacancy in zinc oxide: An origin of n-type doping

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

The interaction between oxygen vacancies and doping atoms in ZnO

Oxygen vacancies: The origin of n-type conductivity in ZnO

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

O-O Bonding Stabilized Zinc Vacancy As Origin of P-Type Doping on Σ7 ZnO Grain Boundary

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

The origin of p-type conduction in (P, N) co-doped ZnO

Unintentionally Doped Hydrogen Removal Mechanism in Li Doped ZnO

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

Influence of Doping Effect on Zinc Oxide by First-Principles Studies

Zn vacancy induced ferromagnetism in K doped ZnO

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

Stabilizing the Oxygen Vacancies and Promoting Water-Oxidation Kinetics in Cobalt Oxides by Lower Valence-State Doping

Revert stable p-type ZnO with LimN complex co-doping from the first-principles study