Electrical Transport-Properties of Cosi2 and Co(Sixge1-X)2 Films Formed by Different Methods

BZ LI,P LIU,GB JIANG,WN HUANG,X LU,RG AITKEN,K DANESHVAR,M PUZEREWSKI,G SINGCO
DOI: https://doi.org/10.1063/1.350200
IF: 2.877
1991-01-01
Journal of Applied Physics
Abstract:The electrical transport properties of CoSi2 and Co(SixGe1-x)2 thin films formed by solid state interaction and co-evaporation in the range of 4-300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-mu-OMEGA-cm and room-temperature (RT) resistivity of 15-mu-OMEGA cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250-degrees-C show a low resistivity of 70-80-mu-OMEGA cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2-3 x 10(22) cm-3, while the carrier Hall mobility has large differences.
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