Abstract:Granular metals offer tailorable electronic properties and play crucial roles in device and sensor applications. We have fabricated a series of nonmagnetic granular CoSi2 thin films and studied the Hall effect and transport properties. We observed a two orders of magnitude enhancement in the Hall coefficient in films fall slightly above the metal-insulator transition. This giant Hall effect (GHE) is ascribed to the local quantum-interference effect induced reduction of the charge carriers. Transmission electron microscopy images and transport properties indicate that our films form two dimensional granular arrays. The GHE may provide useful and sensitive applications.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to explore and explain the Giant Hall Effect (GHE) that occurs in two - dimensional (2D) CoSi₂ granular array thin films. Specifically, the research team prepared a series of non - magnetic CoSi₂ granular thin films to study their Hall effect and transport properties, especially the characteristics near the Metal - Insulator Transition (MIT). #### Main problems: 1. **Significant enhancement of Hall coefficient**: Near the Metal - Insulator Transition, the Hall coefficient \( R_H \) was observed to be enhanced by two orders of magnitude. This phenomenon is known as the Giant Hall Effect (GHE), which is inconsistent with the predictions of classical percolation theory. 2. **Mechanism of the Giant Hall Effect**: The research team attempted to explain the cause of this Giant Hall Effect, attributing it to the reduction of carriers due to local quantum interference effects. 3. **Characteristics of 2D granular arrays**: Through the study of transmission electron microscope (TEM) images and transport properties, it was confirmed that these thin films form 2D granular arrays, and the influence of this structure on the Giant Hall Effect was explored. 4. **Potential applications**: The potential impact of the Giant Hall Effect on practical applications was explored, such as the development of highly sensitive sensors and other nanotechnology applications. ### Specific content: - **Experimental methods**: The research team prepared a series of CoSi₂ thin films with different thicknesses by thermal evaporation deposition method, and carried out characterization methods such as atomic force microscope (AFM), transmission electron microscope (TEM), four - probe electrical and Hall effect measurements. - **Result discussion**: The experimental results showed that near the Metal - Insulator Transition, the Hall coefficient increased significantly, reaching about 100 times that of pure CoSi₂ metal. This enhancement was considered to be due to the carrier localization caused by local quantum interference effects. - **Theoretical explanation**: According to the quantum percolation theory, when the temperature is low and the electron de - phasing length \( L_\phi \) is greater than the micro - structure characteristic size \( \xi \), the carrier wave function will undergo multiple coherent scatterings, resulting in significant local quantum interference effects, which will reduce the carrier density \( n^* \) and further enhance the Hall coefficient. In conclusion, this paper solves the problem of the origin and physical mechanism of the Giant Hall Effect in 2D CoSi₂ granular array thin films, and provides a theoretical basis for possible future applications.

Giant Hall effect in two-dimensional CoSi$_2$ granular arrays

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