Thickness‐Dependent Topological Hall Effect in Two‐Dimensional Cr5Si3 Nanosheets with Non‐Collinear Magnetic Phase

Bailing Li,Hongmei Zhang,Quanyang Tao,Xiaohua Shen,Ziwei Huang,Kun He,Chen Yi,Xu Li,Liqiang Zhang,Zucheng Zhang,Jialing Liu,Jingmei Tang,Yucheng Zhou,Di Wang,Xiangdong Yang,Bei Zhao,Ruixia Wu,Jia Li,Bo Li,Xidong Duan
DOI: https://doi.org/10.1002/adma.202210755
IF: 29.4
2023-02-02
Advanced Materials
Abstract:Antiferromagnets with non‐collinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect and topological Hall effect. In this work, we synthesized two‐dimensional (2D) thickness‐controlled and high‐quality Cr5Si3 nanosheets that is compatible with the CMOS technology by chemical vapor deposition (CVD) method. The angular dependence electromagnetic transport properties of Cr5Si3 nanosheets was investigated by physical property measurement system (PPMS) and an obvious topological Hall effect (THE) appeared at a large tilted magnetic field, which should result from the non‐collinear magnetic structure of the Cr5Si3 nanosheet. The Cr5Si3 nanosheets exhibited distinct thickness‐dependent perpendicular magnetic anisotropy (PMA) and the THE only emerged in the specific thickness rang with moderate PMA. Our work provides opportunities for exploring fundamental spin‐related physical mechanisms of noncollinear antiferromagnet in ultrathin limit. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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