Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

Xiao Feng,Yang Feng,Jing Wang,Yunbo Ou,Zhenqi Hao,Chang Liu,Zuocheng Zhang,Liguo Zhang,Chaojing Lin,Jian Liao,Yongqing Li,Li-Li Wang,Shuai-Hua Ji,Xi Chen,Xucun Ma,Shou-Cheng Zhang,Yayu Wang,Ke He,Qi-Kun Xue
DOI: https://doi.org/10.1002/adma.201600919
IF: 29.4
2016-01-01
Advanced Materials
Abstract:The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.
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