Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets

Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He

DOI: https://doi.org/10.48550/arXiv.1903.06486

2019-03-15

Materials Science

Abstract:We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr$_2$Te$_3$. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr$_2$Te$_3$. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr$_2$Te$_3$ embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr$_2$Te$_3$ samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr$_2$Te$_3$. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.