Topological Hall Effect in Bulk Ferromagnet Cr_2Te_3 Embedded with Black-Phosphorus-like Bismuth Nanosheets

Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He

2019-01-01

Abstract:We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr_2Te_3. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr_2Te_3. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr_2Te_3 embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr_2Te_3 samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr_2Te_3. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.