Electrical Transport Properties of (coxal1−x)2o3−v Oxide Magnetic Semiconductor and Corresponding Co–Al2O3 Granular Films

Y. F. Tian,Y. P. Zhang,Shi-Shen Yan,G. L. Liu,Y. X. Chen,L. M. Mei,G. Ji,Z. Zhang
DOI: https://doi.org/10.1063/1.2754645
IF: 4
2007-01-01
Applied Physics Letters
Abstract:( Co x Al 1 − x ) 2 O 3 − v oxide magnetic semiconductor films were synthesized by introducing an impurity band in the insulating Al2O3 band gap, and the corresponding granular films were obtained by annealing. For both kinds of films, their electrical transport properties are well described by spin dependent variable range hopping mechanism instead of the usually expected intergrain tunnelling. The magnetoresistance was also discussed.
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