Electric and Magnetic Properties of Magnetic (cofetab)(100−x)ox Films

Wen Sun,Awais Siddique Saleemi,Zhaochu Luo,Zhengang Guo,Chengyue Xiong,Ziyao Lu,Xiaozhong Zhang
DOI: https://doi.org/10.1063/1.4998996
IF: 2.877
2017-01-01
Journal of Applied Physics
Abstract:By the controlling of oxygen flow rate, the oxygen content has been altered in the (CoFeTaB)(100−x)Ox system, a newly reported possible magnetic semiconductor. The electric and magnetic properties of (CoFeTaB)(100−x)Ox films are dependent on the oxygen content of (CoFeTaB)(100−x)Ox films. The resistivity of the grown (CoFeTaB)(100−x)Ox films could be altered from 3.77×10−4 Ω·cm to insulator. Correspondingly, the magnetic behavior of the grown (CoFeTaB)(100−x)Ox films was varied from ferromagnetism to paramagnetism. The increase in the resistivity was mainly attributed to the enhanced oxidization of metal Co; and the magnetism conversion was resulted from the decrease of ferromagnetic Fe3+ and increase of paramagnetic Co2+ in the grown films. These findings provide the fundamental reference for tailoring the electric and magnetic properties of (CoFeTaB)(100−x)Ox materials for potential applications in spintronics.
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