Investigation on the Electrical Transport Properties of Highly (00L)-Textured Sb2Te3 Films Deposited by Molecular Beam Epitaxy

Xiangpeng Zhang,Zhigang Zeng,Chao Shen,Ziqiang Zhang,Zhichong Wang,Cong Lin,Zhiyu Hu

DOI: https://doi.org/10.1063/1.4861394

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm2/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ∼ 4 μΩ⋅cm/K.