Effects of Deposition Temperature on Structure and Properties of (k0.48na0.52)nbo3 Ferroelectric Thin Films by Pulsed Laser Deposition

Aifen Tian,Wei Ren,Lingyan Wang,Huiling Du,Xi Yao

DOI: https://doi.org/10.1063/1.4823852

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Highly [001] oriented lead-free (K0.48Na0.52)NbO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The microstructure and electrical properties of the thin films are a strong function of deposition temperature. Highly preferentially [001] oriented thin films were obtained at the deposition temperature of 740 °C. The film exhibits a dielectric constant of 422 and a dielectric loss of 0.058 at 1 kHz. The P-E hysteresis loop shows that the film possesses a large remnant polarization of 11 μC/cm2 and a moderate coercive field of 72 kV/cm. The Ohmic conduction is dominant at the low field for the films except the film deposited at 680 °C. However, the Poole-Frenkel conduction mechanism is dominant at the high field for the films except the film deposited at 700 °C.