Enhanced Ferroelectric Properties in Bi-Doped K0.5na0.5nbo3 Thin Films Prepared by Pulsed Laser Deposition

Aifen Tian,Wei Ren,Lingyan Wang,Huiling Du,Xi Yao
DOI: https://doi.org/10.1016/j.mseb.2013.08.010
2013-01-01
Abstract:Lead-free ferroelectric Bi-doped K0.5Na0.5NbO3 (KNN) and undoped KNN films were prepared by pulsed laser deposition. Bi-doped film exhibited good crystallization and improved ferroelectric properties. The dielectric constant and loss tangent were 1038 and 0.138 at 1 kHz, respectively. The remanent polarization (P-r = 28 mu C/cm(2)) of Bi-doped film was about four times larger than that of the undoped film, which attributed to the decrease of oxygen vacancies concentration. The coercive field (E-c=24 kV/cm) of Bi-doped films was half of the undoped film. The conduction mechanisms of Bi-doped film determined to be Space-Charge-Limited-Current and Poole-Frenkle emission at low and high electric field, respectively. (C) 2013 Elsevier B.V. All rights reserved.
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