Abstract:The thermal properties of Sb-Ge superlattice-like thin films have been experimentally studied for phase change memory. The Sb-Ge superlattice-like thin films have a high crystallization temperature (223 degrees C). The interdiffusion coefficient D-lambda was determined by measuring the intensity of the low-angle X-ray diffraction arising from the modulation as a function of annealing time. The temperature dependence in the temperature range 80-200 degrees C is described by D-lambda = 8.3 x10(-24) exp(-0.24 eV/kT)m(2)/s The thermal stability of Sb-Ge superlattice-like thin films can also dramatically be improved with the increase of the temperature. The density variation of Sb-Ge superlattice-like thin films changes by only around 8% between amorphous and crystalline states, which is very important for device reliability. The threshold current and threshold voltage of a cell based on Sb-Ge are 8.15 mu A, 1.07 V, respectively. The lower RESET power is presented in the PCM cells of Sb-Ge superlattice-like thin films, benefiting from its high resistivity. (C) 2017 Elsevier B.V. All rights reserved.

Investigation Of Al-Sb-Se Alloy For Long Data Retention And Low Power Consumption Phase Change Memory Application

Sb 7 Te 3 /znsb Multilayer Thin Films for High Thermal Stability and Long Data Retention Phase-Change Memory

Investigation of Ge-Sn-Te Alloy for Long Data Retention and High Speed Phase Change Memory Application

Zn-doped Sb70Se30 Thin Films with Multiple Phase Transition for High Storage Density and Low Power Consumption Phase Change Memory Applications

Sb7te3/Ge Multilayer Films for Low Power and High Speed Phase-Change Memory

Ultra-high Speed and Low-Power Superlattice-Like Sn 18 Sb 82 –snse 2 Thin Films for Phase Change Memory Applications

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Al1.3sb3te Material For Phase Change Memory Application

The Study of Phase Change Properties of Sb70Se30 Thin Film with Scandium and Aluminum Doping

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Investigation of Cr(SbTe) alloy for high-speed and high-data-retention phase change random access memory applications

Al19sb54se27 Material for High Stability and High-Speed Phase-Change Memory Applications

Improved phase change behavior of Sb 2 Se material by Si addition for phase change memory

Investigation of Cr 0.06 (Sb 4 Te) 0.94 alloy for high-speed and high-data-retention phase change random access memory applications

Sb Rich Ge2sb5te5 Alloy For High-Speed Phase Change Random Access Memory Applications

A Candidate Zr-Doped Sb2te Alloy for Phase Change Memory Application

Fast Switching and Low Power of Superlattice-Like SnSe2/Sb Thin Films for Phase Change Memory Application

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation