Abstract:Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching. The full width at half maximum (FWHM) of the narrow PL peak available from a freshly etched PSM is about 9 nm. The emission concentrates in a cone of 10° around the normal of the sample, with a further reduced FWHM of ∼5.6 nm under angle-resolved measurements. Only the resonant peak is present in such angle-resolved PL spectra. No peak broadening is found upon exposure of the freshly prepared PSM to a He-Cd laser beam, and the peak becomes somewhat narrower (∼5.4 nm) after the PSM has been stored in an ambient environment for two weeks. At optimized etching parameters, even a 4-nm FWHM is achievable for the freshly etched PSM. In addition, scanning electron microscopy (SEM) plane-view images reveal that the single layer porous Si formed by pulsed current etching is more uniform and flatter than that formed by direct current (dc) etching, demonstrated by the well-distributed circular pores with small size in the former in comparison with the irregular interlinking pores in the latter. The SEM cross-section images show the existence of oriented Si columns of 10 nm diameter along the etching direction within the active layer, good reproducibility and flat interfaces. It is thus concluded that pulsed current etching is superior to dc etching in obtaining flat interfaces within the distributed Bragg reflectors because of its minor lateral etching.

Patterned Arrays of Porous InP from Photolithography and Electrochemical Etching

Electrochemical Pore Etching in N- and P-Type Ge

Fabrication of Ordered Arrays of InP Microstructures by Wet Chemical Etching with Au Masks.

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Deep Groove Etching for Partial Reflectors in InP-based Monolithically Integrated Photonic Devices

Fabrication and Characterization of InP/air-gap Structure

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Surface Grating Fabrication by Inductively Coupled Plasma Dry Etching for InP-Based Photonic Integrated Circuits

Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

A LEED, ELS Study of InP(100) Surfaces Prepared by Phosphorus Deposition and Post-Annealing

Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy

Transmission electron microscopy studies of photochemically etched porous silicon

Patterned Au/poly(dimethylsiloxane) substrate fabricated by chemical plating coupled with electrochemical etching for cell patterning.

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Small-feature-size Etching of InP/InGaAsP by Inductively Coupled Plasma at Ultra-Low Pressure

Flat Layered Structure and Improved Photoluminescence Emission from Porous Silicon Microcavities Formed by Pulsed Anodic Etching

Hierarchical Nanostructuring of Porous Silicon with Electrochemical and Regenerative Electroless Etching