Abstract:Semiconductor/electrolyte interfaces are used in many application areas where strong non linear variations in the electric performance depending on applied potential or due to illumination play a decisive role. Often a simplified explanation on charge redistribution across the semiconductor/electrolyte junctions is applied considering only the charge redistribution involving the bulk and the electrolyte following an idealized semiconductor /metal Schottky barrier model. But as will be addressed in our contribution strong deviations are usually observed in real devices which are due to Fermi level pinning effects and adsorbate related double layer potential shifts of the band edges. This is especially true for photoelectrochemical cells used in water splitting devices. For this reason we will present detailed surface science studies on the properties of Si and III-V surfaces espcially by applying photoelectron spectroscopy. In so-called model experiments the effect of surface states found on differently doped Si(111) and (100) surfaces is investigated in relation to the resulting surface electronic structure after appying different surface preparation and processing procedures. Additionally the reactivity and the changes in electronic structure following a „frozen electrolyte“ junction formation will be presented after water exposure at low sample temperature. The results are compared to photoelectrochemical cells based on Si single crystals as well as thin film multiabsorber cells used as photocathodes. For III-V semiconductors at first the surface properties of etched InP, GaP and GaInP (100) surfaces will be compared and further modified by subsequent vacuum based processing steps as heating and sputtering. The best surfaces are in their surface composition very close to samples prepared by MOCVD. Also for the III-V materials the interaction with H 2 O was investigated. In all cases Fermi level pinning close to the valence band maximum was observed and compared to the resulting band diagrams of photoelectrochemical devices used for HER. In combining photoelectrochemical studies with surface science investigations on the electrode properties using directly contacted but also buried junction photoelectrodes it can be shown that defect levels related to remaining dangling bond states play a dominant role for the performance of the devices. The concentration of the remaining defect states influence the obtained performance in dependence of the interfacial contact composition preferring the formation of buried junctions. In conclusion we suggest that surface science studies of photoelectrodes before and after electrochemical studies are essential and need to be further developed for in operando experiments with special emphasis also in the valence band regime to obtain improved insights into semiconductor/electrolyte junction properties.

The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy

On the origin of the photocurrent of electrochemically passivated p-InP(100) photoelectrodes.

(Invited) (Photo-)Electrochemical Reactions on Semiconductor Surfaces:Si and III-V Surfaces – Atomic and Electronic Structure

Modulation of Surface Bonding Topology: Oxygen Bridges on OH- Terminated InP (001)

Probing the Surface Oxidation of III-V Photoelectrodes with First-Principles Simulations and in Situ Experiments

Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2 Interface

Interfacial engineering of gallium indium phosphide photoelectrodes for hydrogen evolution with precious metal and non-precious metal based catalysts

Interface Chemistry and Surface Morphology Evolution Study for InAs/Al2O3 Stacks Upon in Situ Ultrahigh Vacuum Annealing

In Situ Investigations of Al/Perovskite Interfacial Structures

Oxidation-Induced Polymerization of InP Surface and Implications for Optoelectronic Applications

Understanding and exploiting interfacial interactions between phosphonic acid functional groups and co-evaporated perovskites

Tuning Surface Electronics State of P-Doped In2.77S4/In(OH)3 Toward Efficient Photoelectrochemical Water Oxidation.

Understanding the Stability of Etched or Platinized p-GaInP Photocathodes for Solar-Driven H2 Evolution

Interfaces and Interfacial Layers in Inorganic Perovskite Solar Cells

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

Engineering the Siox Interfacial Layer of Si-Based Metal-Insulator-Semiconductor Junction for Photoelectrochemical Hydrogen Production

In Situ Passivation of Inp Surface Using H2s During Metal Organic Vapor Phase Epitaxy

Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures

In situ investigations of interfacial degradation and ion migration at CH3NH3PbI3 perovskite/Ag interface

The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties