Abstract:ConspectusPhotoelectrochemical water splitting is a promising avenue for sustainable production of hydrogen used in the chemical industry and hydrogen fuel cells. The basic components of most photoelectrochemical water splitting systems are semiconductor light absorbers coupled to electrocatalysts, which perform the desired chemical reactions. A critical challenge for the design of these systems is the lack of stability for the majority of desired semiconductors under operating water splitting conditions. One strategy to address this issue is to protect the semiconductor by covering it with a stabilizing insulator layer, creating a metal-insulator-semiconductor (MIS) architecture, which has demonstrated improved stability. In addition to enhanced stability, the insulator layer may significantly affect the electron and hole transfer, which governs the recombination rates. Furthermore, the insertion of an insulator layer leads to the introduction of additional insulator/electrocatalyst and insulator/semiconductor interfaces. These interfaces can impact the system's performance significantly, and they need to be carefully engineered to optimize the efficiencies of MIS systems. In this Account, we describe our recent progress in shedding light on the critical role of the insulator and the interfaces on the performance of MIS systems. We discuss our findings by focusing on the concrete example of planar n-type Si protected by a HfO2 insulator layer and coupled to a Ni or Ir electrocatalyst that performs the oxygen evolution reaction, one of the water splitting half-reactions. To improve our fundamental understanding of the insulator layer, we precisely control the HfO2 insulator thickness using atomic layer deposition (ALD), and we perform a series of rigorous electrochemical experiments coupled with theory and modeling. We demonstrate that by tuning the insulator thickness, we can control the flux and recombination of photogenerated electrons and holes to optimize the generated photovoltage. Despite optimizing the thickness, we find that the maximum generated photovoltage in MIS systems is often significantly lower than the upper performance limit, i.e., there are additional losses in the system that could not be addressed by optimizing the insulator thickness. We identify the sources of these losses and describe strategies to minimize them by a combination of improving the semiconductor light absorption, removing nonidealities associated with interfacial defects, and finding alternative insulators with improved charge carrier selectivity. Finally, we quantify the improvements that can be obtained by implementing these specific strategies. Our collective work outlines strategies to analyze MIS systems, identify the sources of efficiency losses, and optimize the design to approach the fundamental performance limits. These general approaches are broadly applicable to photoelectrochemical materials that utilize sunlight to produce value-added chemicals.

Engineering the Siox Interfacial Layer of Si-Based Metal-Insulator-Semiconductor Junction for Photoelectrochemical Hydrogen Production

Metal–insulator–semiconductor photoelectrodes for enhanced photoelectrochemical water splitting

Surface Engineering of Nanoporous Silicon Photocathodes for Enhanced Photoelectrochemical Hydrogen Production

High Performance P-Si/ni3s2 Photocathode for Photoelectrochemical Hydrogen Evolution in Neutral Solution

Stabilization of Silicon Photoanode By Hafnium Zirconium Oxide Interlayer for Efficient Solar Water Oxidation

Development of A Corrosion-Resistant Amorphous Silicon Carbide Photoelectrode for Solar-To-Hydrogen Photovoltaic/Photoelectrochemical Devices

NiSi 2 /p-Si Schottky Junction Photocathode with a High-Quality Epitaxial Interface for Efficient Hydrogen Evolution

Dissolution-Induced Surface Reconstruction of Ni0.95Pt0.05Si/p-Si Photocathode for Efficient Photoelectrochemical H2 Production

Silicon Based Photoelectrodes for Photoelectrochemical Water Splitting

Surface/Interface Engineering of Si-Based Photocathodes for Efficient Hydrogen Evolution

Development of a Hybrid Photoelectrochemical (PEC) Device with Amorphous Silicon Carbide As the Photoelectrode for Water Splitting

Low-cost, scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

Optimizing the Band Alignment of P-Si Based Heterojunction Photocathode for Photoelectrochemical Hydrogen Production

Insulator Layer Engineering toward Stable Si Photoanode for Efficient Water Oxidation

Design Principles for Efficient and Stable Water Splitting Photoelectrocatalysts

Enhanced Solar Hydrogen Evolution by Laminated Integration of N+P-Siip/Tio2/Pt Inverted Pyramid Black Si Photocathode

Surface Modification of A-Sic Photoelectrodes for Photocurrent Enhancement

Strategies to Construct N-Type Si-Based Heterojunctions for Photoelectrochemical Water Oxidation

Strategies for Improving Photoelectrochemical Water Splitting Performance of Si‐based Electrodes

Enabling Unassisted Solar Water Splitting by Single-Junction Amorphous Silicon Photoelectrodes

(Invited) Engineering Surface Structures and Energetics of α-Fe<sub>2</sub>O<sub>3</sub> and p-Si for Efficient Solar Water Splitting