Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Effective Mobility in P-Channel Si–SiGe Metal Oxide Semiconductor Field Effect Transistors (Mosfets)

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Effective Mobilities in Pseudomorphic Si/Sige/Si P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Thin Silicon Capping Layers

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Monte Carlo Study of Germanium N- and P- MOSFETs

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Mosfet Carrier Mobility Model Based on Gate Oxide Thickness, Threshold and Gate Voltages

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

MOS Interface Engineering for High-Mobility Ge CMOS

Model of Electron Mobility in Inversion Layer of Strained Si/Si1-X Ge-X N Type Metal-Oxide-Semiconductor Field-Effect Transistors

A Carrier-Mobility Model for High-K Gate-Dielectric Ge MOSFETs with Metal Gate Electrode

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Field-Effect Mobility Temperature Modeling of 4H-Sic Metal-Oxide-Semiconductor Transistors

Channel Electron Mobility in 4h–sic Lateral Junction Field Effect Transistors

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis