Abstract:During the fabrication of an indium-gallium-zinc oxide (IGZO) thin film transistor (TFT), the thermal process was used to reduce the resistivity of IGZO. The annealing temperature was found to have great influence on the transistor characteristics. At an optimized heat-treatment temperature, the depletion-mode IGZO TFT was fabricated with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage. And the relatively conductive IGZO could directly replace the indium tin oxide as the transparent electrode of the organic light-emitting diode (OLED), reducing the mask count of the backplane for the active-matrix OLED display. INTRODUCTION Thin film transistor (TFT) based on metal oxide (MO), especially, indium-gallium-zinc oxide (IGZO), is considered as a good candidate to fabricate large area backplane for active-matrix organic light-emitting diode (AMOLED) display, due to its high mobility, good uniformity and low off-state current [1]. Our previous study [2] suggested that the resistivity (ρ) of IGZO highly depended on the heat-treatment conditions, such as annealing ambience, temperature, duration and gas permeability of IGZO cover, while the thermal process was often inevitable during the fabrication of IGZO TFT. With the active layer of IGZO covered with the gas-permeable silicon oxide (SiOx), the TFT was subjected to a serious anneals in an oxygen-deficient nitrogen (N2) ambience. With the increasing temperature, although the mobility was enhanced, the turn-on voltage (Von) became more and more negative. At an optimized temperature, the depletion-mode (DM) IGZO TFT with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage was fabricated. Furthermore, such annealing-induced conductive IGZO source/drain regions can be directly used to replace the indium tin oxide (ITO) as the transparent electrode of OLED, reducing the mask count of AMOLED backplane. Annealing-Induced DM IGZO TFT Shown in Figure 1 is the evolution of the schematic cross-section of an IGZO TFT. A gate dielectric of 100 nm silicon oxide (SiOx) was first thermally grown on an n+ silicon substrate, which served as the gate electrode. 10 or 20 nm IGZO film was then room-temperature sputtered using a target of In2O3:Ga2O3:ZnO = 1:1:1 mol% in an atmosphere of 10% oxygen (O2) and 90% argon (Ar). After the patterning of the active-island using the hydrofluoric acid, a passivation layer of 300 nm SiOx was deposited at 300 oC in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The tetraethylorthosilicate (TEOS) and O2 were used as the source gases. The contact holes were then opened and the resulting structure was subjected to a series of anneals, as shown in Figure 1a. Finally, 300 nm aluminum (Al) was deposited and patterned into electrodes (Fig. 1b). These TFTs were measured using an Agilent 4156C semiconductor parameter analyzer. n+ Si 100nm SiOx 300nm SiOx

Thermally Induced Variation of the Turn-ON Voltage of an Indium–Gallium–Zinc Oxide Thin-Film Transistor

P-22: Turn-On Voltage Modulation of Indium-Gallium-Zinc-Oxide Thin-Film Transistors Through Thermal Annealing Processes

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors