Abstract:Light emitting diodes (LEDs) based on indium gallium nitride (InGaN) have been used widely in lighting applications and have shown great potential with high wall-plug efficiency and low manufacturing cost. However, one of the roadblocks in achieving higher light-extraction efficiency is total internal reflection, which prevents a majority of the photons from being extracted from the LEDs.The objective of this paper is to investigate measures for improving LED chip efficiency. Here, a high efficiency LED structure has been theoretically demonstrated using an infiltrated opal layer. A layer of indium-tin oxide (ITO) infiltrated opals was deposited on the surface of the LED chips as the light extraction layer in order to enhance the light extraction efficiency. Opals of similar radius periodically arranged on the structure will work as a rough surface. By enhancing the light extraction angle, the spontaneous emission from the active region can be emitted vertically. At the same time, opals with different radius and different refractive indexes are also studied. ITO, as the infiltration, is used to provide good lateral current spreading.The plane wave expansion (PWE), finite difference time domain,(FDTD), and rigorous coupled wave analysis (RCWA) methods are used to calculate the energy band structures and the extraction efficiency of the infiltrated opals layer. The scanning method and the Monte Carlo method are employed to optimize the structural parameters of the infiltrated opal layer. The infiltrated opals layer on the LED shows a high light extraction efficiency of over 60%.

High Extraction Efficiency Ingan-Based Light-Emitting Diodes with Air-Hole Photonic Crystal Slab

High Light Extracting Efficiency of Gan-Based Led Based on Photonic Crystal

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Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

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Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

Enhancement of Extraction Efficiency by Metallic Photonic Crystal Embedding in Light-Emitting Diode

Further Enhancement of Light Extraction Efficiency of Light-Emitting Diode with Ag Film Grown on Photonic Crystals

Analysis of the Light Extraction Efficiency of Light-Emitting Diodes with Photonic Crystals Combined with the Generalized Rouard Method.

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Extraction Efficiency and Polarization Induced by Photonic Crystal Structure on GaN-based Blue LED

Enhanced Optical Power of GaN-based Light-Emitting Diode with Compound Photonic Crystals by Multiple-Exposure Nanosphere-Lens Lithography

Monte Carlo Simulation on Light Extraction Efficiency of GaN-based Light Emitting Diodes with Different Structure Parameters

Optimization of Lattice Constants of 2d Photonic Crystals Fabricated on Ito Layers of Leds Using Holographic Method for Efficient Light Extraction

Position Dependence of Extraction Efficiency in Organic Light-Emitting Diodes with Photonic Crystal Structure

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Lattice Constant Effects of Photonic Crystals on the Extraction of Guided Mode of GaN Based Light Emitting Diodes