Abstract:In recent years, metallic nano-light-emitting diode (LED) arrays have gained wide attention as new-generation lighting materials. This study evaluates the optical properties of triangular array Ag nanodisc GaN-LED and analyses its effects on internal radiation and external light extraction of LED by changing the cycle and height of the Ag nanodisc. We use FDTD software for simulation. The results showed that the increase in the spontaneous emission rate depended on the localised surface plasmon (LSP) generated by the Ag nanodisc and the multiple quantum well layer, considering the coupling between the surface plasmon and the dipole enhanced the internal energy. Owing to the optimal structural parameters, the spontaneous emission rate was enhanced by 4.79 times, and the power integral of the internal radiation source increased from 0.037 to 0.177. Furthermore, the enhanced energy from coupling did not radiate outward and was limited to the surface of the Ag nanodisc. Additionally, a two-dimensional photonic crystal structure was embedded in the p-layer to transform the LSP into a radiation plasmon. When the transmittance was 0.32, the top surface power integral increased from 0.021 to 0.131, light output power increased by 5.47 times, and the factor of light extraction efficiency increased by 1.79 times. These results provide practical values that can be applied in optimising the design of high-performance GaN-based LED.

Further Enhancement of Light Extraction Efficiency of Light-Emitting Diode with Ag Film Grown on Photonic Crystals

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

High-output power GaN-LED based on surface plasmon enhancement

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Photonic Crystal Light Emitting Diode

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Highly Enhanced Luminescence Performance of LEDs Via Controllable Layer‐Structured 3D Photonic Crystals and Photonic Crystal Beads

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Analysis of the Light Extraction Efficiency of Light-Emitting Diodes with Photonic Crystals Combined with the Generalized Rouard Method.

Simulation and experiment on 2PC transmitted diffraction grating for GaN LEDs

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Lattice Constant Effects of Photonic Crystals on the Extraction of Guided Mode of GaN Based Light Emitting Diodes

Surface Plasmon-Enhanced Micro-Cylinder Mode in Photonic Quasi-Crystal.

Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

Enhancement of the Light Output of Light-Emitting Diode with Double Photonic Crystals

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures