Abstract:Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58 degrees with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4 degrees. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9 degrees. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9 degrees improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.

Optimization of Lattice Constants of 2d Photonic Crystals Fabricated on Ito Layers of Leds Using Holographic Method for Efficient Light Extraction

Lattice Constant Effects of Photonic Crystals on the Extraction of Guided Mode of GaN Based Light Emitting Diodes

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Selectively Grown Photonic Crystal Structures for High Efficiency InGaN Emitting Diodes Using Nanospherical-Lens Lithography

Coupled Optical and Electronic Simulations of Electrically Pumped Photonic-Crystal-Based Leds

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Large-Scale Sio2 Photonic Crystal for High Efficiency Gan Leds by Nanospherical-Lens Lithography

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

Size-controllable Nanopyramids Photonic Crystal Selectively Grown on P-Gan for Enhanced Light-Extraction of Light-Emitting Diodes.

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

Surface Light Extraction Mapping from Two-Dimensional Array of 12-Fold Photonic Quasicrystal on Current Injected Gan-Based Leds

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

Highly Enhanced Luminescence Performance of LEDs Via Controllable Layer‐Structured 3D Photonic Crystals and Photonic Crystal Beads

Two-Dimensional Photonic Quasicrystal on the Surface of Gan-Based Light Emitting Diodes

High-output power GaN-LED based on surface plasmon enhancement

Nonperiodic Binary Optical Structures for Enhancing Light Extraction of Emitters

Simulation of Nanoscale ITO Top Grating of GaN LED