Abstract:Although the Cu doped Bi2Se3 topological insulator was discovered and intensively studied for almost a decade, its electrical and magnetic properties in normal state, and the mechanism of 'high-T-c' superconductivity regarding the relatively low-carrier density are still not addressed yet. In this work, we report a systematic investigation of magnetic susceptibility, critical fields, and electrical transport on the nominal Cu0.20Bi2Se3 single crystals with Tconset<i = 4.18 K, the highest so far. The composition analysis yields the Cu stoichiometry of x = 0.09(1). The magnetic susceptibility shows considerable anisotropy and an obvious kink at around 96 K was observed in the magnetic susceptibility for H parallel to c, which indicates a charge density anomaly. The electrical transport measurements indicate the two-dimensional (2D) Fermi liquid behavior at low temperatures with a high Kadowaki-Woods ratio, A/gamma(2) = 30.3a(0). The lower critical field at 0 K limit was extracted to be 6.0 Oe for H parallel to ab. In the clean limit, the ratio of energy gap to T-c was determined to be Delta(0)/k(B)T(c) = 2.029 +/- 0.124 exceeding the standard BCS value 1.764, suggesting Cu0.09Bi2Se3 is a strong-coupling superconductor. The in-plane penetration depth at 0 K was calculated to be 1541.57 nm, resulting in an unprecedented high ratio of T-c/lambda(-2)(0) approximately equal to 9.86. Moreover, the ratio of T-c to Fermi temperature is estimated to be Tc/TF2D<i = 0.034. Both ratios fall into the region of unconventional superconductivity according to Uemura's regime, supporting the unconventional superconducting mechanism in CuxBi2Se3. Finally, the enhanced T-c value higher than 4 K is proposed to arise from the increased density of states at Fermi energy and strong electron-phonon interaction induced by the charge density instability.

Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3

Electron Delocalization and Relaxation Behavior in Cu-Doped Bi2se3 Films

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

Magnetically Doped Semiconducting Topological Insulators

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Unconventional superconductivity in Cu<sub>x</sub>Bi<sub>2</sub>Se<sub>3</sub> from magnetic susceptibility and electrical transport

Crystal structure and distortion of superconducting Cu$_x$Bi$_2$Se$_{3}$

Doping Nature of Cu in Epitaxial Topological Insulator Bi2te3 Thin Films

Growth and characterization of Bi2+xSr2-xCuO6+δBi2+xSr2-xCuO6+δ single crystals

Magnetotransport study of topological superconductor Cu<sub>0.10</sub>Bi<sub>2</sub>Se<sub>3</sub> single crystal.

Unconventional Superconductivity in CuxBi2Se3 from Magnetic Susceptibility and Electrical Transport

Transport Properties in Cu_xTiSe_2 (0.015≤x≤0.110) Single Crystal

A combined method for synthesis of superconducting Cu doped Bi2Se3

Electronic Structure, Irreversibility Line and Magnetoresistance of Cu0.3bi2se3 Superconductor

Optical Study on Topological Superconductor Candidate Sr-doped Bi2Se3

Magnetotransport study of topological superconductor Cu 0.10 Bi 2 Se 3 single crystal.

Local Structures Around 3d Metal Dopants in Topological Insulator Bi2se3 Studied by Exafs Measurements

Growth and Transport Properties of Topological Insulator Bi 2 Se 3 Thin Film on a Ferromagnetic Insulating Substrate