Growth and characterization of Bi2+xSr2-xCuO6+δBi2+xSr2-xCuO6+δ single crystals

H LUO,L FANG,G MU,H WEN
DOI: https://doi.org/10.1016/j.jcrysgro.2007.02.043
IF: 1.8
2007-01-01
Journal of Crystal Growth
Abstract:High-quality Bi2+xSr2-xCuO6+δ(0<x⩽0.5) single crystals have been grown successfully using the travelling-solvent floating-zone (TSFZ) technique. The samples with x>0.05 are in the underdoped level. The structure of these crystals was investigated by X-ray diffraction. The evolution of c-axis lattice parameters with varied x is displayed, which is strongly associated with the behavior of Tc. The crystals exhibit superconducting transitions with Tc=9–0.8K for the samples with x=0.05–0.20, while for samples with x=0.25 and above no superconductivity was discovered down to 1.6K. The resistivity of samples with x=0.31, 0.40 and 0.50 exhibits a drastic divergence as temperature approaches 0K.
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