Growth and Post-Annealing Studies of Bi2sr2-Xlaxcuo6+Delta (0 <= X <= 1.00) Single Crystals

Huiqian Luo,Peng Cheng,Lei Fang,Hai-Hu Wen
DOI: https://doi.org/10.1088/0953-2048/21/12/125024
2008-01-01
Abstract:Bi2Sr2-xLaxCuO6+delta (0 <= x <= 1.00) single crystals with high quality have been grown successfully using the traveling-solvent floating-zone technique. The patterns of x-ray diffraction suggest high crystalline quality of the samples. After post-annealing in flowing oxygen at 600 degrees C, the crystals show sharp superconducting transitions revealed by AC susceptibility. The hole concentration p is deduced from the superconducting transition temperature (T-c), which exhibits a linear relation with La doping level x. It ranges from the heavily overdoped regime (p approximate to 0.2) to the extremely underdoped side (p approximate to 0.08) where the superconductivity is absent. Comparing with the superconducting dome in the Bi2+xSr2-xCuO6+delta system, the effects from out-of-plane disorders show up in our samples. Besides the La doping level x, the superconductivity is also sensitive to the content of oxygen which could be tuned by the post-annealing method over the whole doping range. The post-annealing effects on T-c and p for each La doping level are studied and give some insights on the differences in nature between the overdoped and underdoped regimes.
What problem does this paper attempt to address?