Crystal Growth and Anisotropic Resistivity of Bi2Sr2-xLaxCuOy.

NL Wang,B Buschinger,C Geibel,F Steglich
DOI: https://doi.org/10.1103/physrevb.54.7449
1996-01-01
Abstract:A number of Bi2Sr2-xLaxCuOy crystals with different doping levels in the phase diagram have been grown and characterized by x-ray-diffraction measurements. The anisotropic resistivity was measured using a generalization of the Montgomery method and was found to change in a systematic way. Our analysis indicates that for all the samples the in-plane transport is on the metallic side of the Ioffe-Regel criterion, but the out-of-plane transport is deeply on the insulating side of the Mott limit. The temperature dependence of c-axis resistivity rho(c)(T) can be well understood from the incoherent hopping model proposed by Levin and co-workers. The evolution of rho(c)(T) with reduction in doping level is related to the reducing of both the impurity- and boson-assisted hopping processes.
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