Abstract:Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercalation of dopant atoms may not necessarily make doped Bi2Se3 superconducting. Thus, the structural origin of superconductivity in doped Bi2Se3 remains an open question. Herein, we combined material synthesis and characterization, high-resolution transmission electron microscopy, and first-principles calculations to study the doping structure of Sr-doped Bi2Se3. We found that the emergence of superconductivity is strongly related with n-type dopant atoms. Atomic-level energy-dispersive X-ray mapping revealed various n-type Sr dopants that occupy intercalated and interstitial positions. First-principles calculations showed that the formation energy of a specific interstitial Sr doping position depends strongly on Sr doping level. This site changes from a metastable position at low Sr doping level to a stable position at high Sr doping level. The calculation results explain why quenching is necessary to obtain superconducting samples when the Sr doping level is low and also why slow furnace cooling can yield superconducting samples when the Sr doping level is high. Our findings suggest that Sr atoms doped at interstitial locations, instead of those intercalated in van der Waals gaps, are most likely to be responsible for the emergence of superconductivity in Sr-doped Bi2Se3.

Optical Study on Topological Superconductor Candidate Sr-doped Bi2Se3

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Phonon Softening and Higher-Order Anharmonic Effect in the Superconducting Topological Insulator SrxBi2Se3.

Phonon Softening and Higher-Order Anharmonic Effect in the Superconducting Topological Insulator Sr X Bi2Se3

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

Electronic structure and relaxation dynamics in a superconducting topological material

Electronic Structure, Irreversibility Line and Magnetoresistance of Cu0.3bi2se3 Superconductor

Possible structural origin of superconductivity in Sr-doped Bi2Se3

Magnetically Doped Semiconducting Topological Insulators

Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3

Electron Delocalization and Relaxation Behavior in Cu-Doped Bi2se3 Films

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Investigate the Nb Doping Position and Its Relationship with Bulk Topological Superconductivity in NbxBi2Se3 by X-ray Photoelectron Spectra

Superconductivity with Two-Fold Symmetry in Topological Superconductor Sr X Bi2Se3

Temperature-Induced Plasma Frequency Shift in Bi 2 Te 3 and Cu X Bi 2 Se 3

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Optical Study of the Topological Materials LnSbTe (ln = La, Ce, Sm, Gd)

Optical-pump terahertz-probe spectroscopy of the topological crystalline insulator Pb1-xSnxSe through the topological phase transition

Superconductivity with topological surface state in SrxBi2Se3