Electron Delocalization and Relaxation Behavior in Cu-Doped Bi2se3 Films

Mingze Li,Zhenhua Wang,Liang Yang,Da Li,Q. R. Yao,G. H. Rao,Xuan P. A. Gao,Zhidong Zhang
DOI: https://doi.org/10.1103/physrevb.96.075152
IF: 3.7
2017-01-01
Physical Review B
Abstract:CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.
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