Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Icm - An Analytical Inversion Charge Model For Accurate Modeling Of Thin Gate Oxide Mosfets

Statistical Analysis of Quantized Inversion Layer in MOS Devices with Ultra-Thin Gate Oxide and High Substrate Doping Levels

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

An Unified Model to Characterize the Strong Inversion High-Frequency Capacitance in Thin Oxide MOS Structures under Fowler-Nordheim Tunneling Injection Condition

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics