Icm - An Analytical Inversion Charge Model For Accurate Modeling Of Thin Gate Oxide Mosfets

yuhua cheng,kai chen,keitaro imai,chenming hu

DOI: https://doi.org/10.1109/SISPAD.1997.621348

1997-01-01

Abstract:An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13 mu m channel length.