Abstract:A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is compatible with commercial AlGaN/GaN n-channel electronics, but the performance of GaN p-channel transistors has been far behind. In this work, 2DHGs in GaN/AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated. The Al composition of the AlGaN barrier has been pushed as high as possible without obvious strain relaxation, and the record high 2DHG sheet density and conductivity on the GaN/AlGaN/GaN platform have been obtained. By adopting a parallel conduction model, a dependent relationship of the 2DHG density on temperature has been extracted. The temperature dependent Hall-effect results have demonstrated that the 2DHG density boosts by 75 times and 46 times at room temperature and 77 K, respectively, when the Al composition is pushed from 0.18 to 0.45 for the AlGaN barriers. The 2DHG sheet density reaches 3.6 × 10 13 and 2.1 × 10 13 cm −2 at room temperature and 77 K, respectively, and the lowest sheet resistance is 8.9 kΩ/□ at 77 K. Such a 2DHG is beneficial for fabrication of p-channel GaN transistors with lower on-resistance on the already-industrialized platform.

InAlN/InGaN/GaN Double Heterostructure with Improved Carrier Confinement and High-Temperature Transport Performance Grown by Metal-Organic Chemical Vapor Deposition

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Analysis of the high-temperature transport property in GaN-based single and double heterostructures

Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

High Electron Mobility And Low Sheet Resistance In Lattice-Matched Alinn/Aln/Gan/Aln/Gan Double-Channel Heterostructure

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

A 2 Nm Low Temperature Gan Spacer To Improve The Transport Properties Of Two-Dimensional Electron Gas In Algan/Inaln/Aln/Gan Heterostructures