Abstract:Sapphire is an important material for optical applications, but the anisotropy of key properties makes it difficult to obtain uniform ground surface. In this work, cross-grinding experiments were first conducted on C- and M-planes of sapphire to investigate the dependence of the ground surface quality on crystal orientation. Then, scratching tests were performed along the specific crystal orientations to explain the formation mechanism of the anisotropic grinding patterns. The results showed that the surface roughness distribution on C-plane is of a threefold symmetry, while one axis of symmetry for M-plane. The damage pits on C-plane possess lower aspect ratio than that on M-plane. By combining the scratching-induced fracture features with the contact-induced deformation theory of sapphire, it was found that the propagation of the primary cracks in sapphire is accompanied by activating different deformation systems. The material removal on C-plane is dominated by the shallow lateral cracks, which propagate parallel to the ground surface and result in shallow and wide pits. However, the deep lateral cracks play an important role on M-plane, which intersect with the ground surface and cause deep and dense defects. The non-uniformity of the ground surface is attributed to the appearance of radial cracks for C-plane, while it is associated with the number of the available deformation systems for M-plane.

Research on the Multi-Crystalline Structure in Sapphire Grown by Kyropoulos Technique

Synchrotron X‐ray Diffraction Studies of Large Sapphire Crystal Grown by Kyropoulos‐like Method

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

Crystallisation Surface Microtopography of [1120]- Direction Growth Sapphire Crystal

Crystallisation surface microtopography of growth sapphire crystal

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire

Effect of Shouldering Angle on Distribution of Thermal Stress in Sapphire Single Crystal Growth Using Improved Kyropoulos

X-ray Topographic Observation of Dislocation Structure in Sapphire Single Crystal Grown by Temperature Gradient Technique

Crystallisation Surface Microtopography Of [11(2)Over-Bar0] - Direction Growth Sapphire Crystal

The Simulation of the Stress Distribution in Sapphire Crystal Grouth Progres

The Spectra And Color Centers Of Large Sapphire Crystal

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

Study on the technology of large size sapphire single crystal growth by SAPMAC

Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification

Temperature Field Design, Process Analysis and Control of SAPMAC Method for the Growth of Large Size Sapphire Crystals

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

Growth, quality inspection and ultrasonic vibration cutting of large size sapphire grown by SAPMAC method

Research on Surface Formation Mechanism in Elliptical Ultrasonic Assisted Grinding (EUAG) of Monocrystal Sapphire Using Structure Function Fractal Method

The MIVD method of optimal seeding state detection using image processing technology for sapphire crystal growth via the Kyropoulos method