Properties of sputtered CdS and CdTe films and performance of CdTe solar cells as a function of annealing temperature

min guo,xiurong zhu,hejun li

DOI: https://doi.org/10.1016/j.mssp.2015.07.088

IF: 4.1

2015-01-01

Materials Science in Semiconductor Processing

Abstract:Thin film PV devices were fabricated in FTO/CdS/CdTe/Cu/Au superstrate configuration by RF sputtering of CdS and CdTe films, and CdCl2 activation process was performed at 370, 380 and 390 degrees C, respectively. Morphological studies indicated for the first time that there were numerous holes randomly distributed at the as-deposited CdS/CdTe interface; although the holes were reduced after CdC12 annealing, the p-n junction was greatly improved. Further, the new concept of solar spectrum window width (64) for the solar cells was demonstrated, and the Delta E-g of CdTe solar cells was found to be extended with increasing annealing temperature. Moreover, the efficiency of CdTe solar cells was dramatically improved from 0.02% to 12.02% as a function of annealing temperature, and the values off() and A were reduced with the optimal values (7.2 x 10(-7) mA/cm(2) and 1.87), indicating the primary carrier recombination of the best device was Shockley-Real-Hall mechanism in the space charge region. (C) 2015 Elsevier Ltd. All rights reserved.