Abstract:This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 mu m, 650V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779V at 25 degrees C, and the leakage current is only 5nA at 650V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

A Rugged 650v Soi-Based High-Voltage Half-Bridge Igbt Gate Driver Ic For Motor Drive Applications

Fully Integrated High-Voltage Level Shifts and Drivers for Buck Converters.

A High-Voltage LED Driver Using SOI Technology

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Novel Single Power-Supply IGBT Driver Circuit

High Voltage Driver Ic With Improved Immunity To Di/Dt Induced Substrate Noise

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity

Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

A Power Supply Solution for High-Voltage IGBT Drivers

Bipolar Gate Drive Integrated Circuit for Insulated Gate Bipolar Transistor to Achieve Better Tradeoff Between the Turn-off Losses and Collector Voltage Overshoot

A Radiation-hard Gate Driver Circuit for High Voltage Application

800V Lateral IGBT in Bulk Si for Low Power Compact SMPS Applications

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

A 0.35μm 600V Ultra-Thin Epitaxial BCD Technology for High Voltage Gate Driver IC

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique