A Smart Silicon Carbon LED Driver IC with Integrated Dual-Level Condition Monitoring Mechanism
Yuanqing Huang,D. Brian Ma
DOI: https://doi.org/10.1109/tpel.2024.3358634
IF: 5.967
2024-01-01
IEEE Transactions on Power Electronics
Abstract:To address ever-mounting reliability challenges faced by SiC power devices, this article develops an innovative dual-level condition monitoring mechanism aimed at bolstering the robustness of power circuits. This monitoring mechanism is structured to scrutinize both chip and package levels. It also introduces an in-situ reliability-aware modulator to evaluate chip-level degradation precursor TON, package-level aging precursor dynamic on-resistance rDS_ON, and the device's end-of-failure indicator IGSS jointly. From circuit design perspective, an integrated gate driving module incorporates functions for TON and IGSS extraction seamlessly, allowing for intelligent self-sensing with minimal design complexity. To validate the efficacy of these research endeavors, a SiC LED driver IC prototype was developed on a 180-nm HV BCD process, with an active die area of 1.12 mm². The IC facilitates a power converter with up to 600V input voltage, which efficiently regulates a nominal LED current of 300mA at a maximum switching frequency of 500kHz and delivers a maximum output power of 150W. In comparison to its silicon-based counterpart, the SiC power converter operates at lower junction temperature, thereby enhancing thermal management capacity by around 16%. The integrated gate driver and the in-situ reliability-aware modulator occupy a mere 0.17 mm² of die area. The work successfully demonstrates consistent monitoring of both chip and package-related degradations, showcasing variations of 11.7% and 3.8%, respectively. It offers a highly cost-effective solution in mitigating the reliability challenges linked to SiC devices for high-performance power applications.
engineering, electrical & electronic