Yield Analysis of Large-Area High-Power Single-Chip Gan-Based Light- Emitting Diodes with Network Design

Wei Wang,Yong Cai,Yibin Zhang,Hongjuan Huang,Wei Huang,Haiou Li,Baoshun Zhang
DOI: https://doi.org/10.1002/pssr.201308308
2014-01-01
Abstract:In this Letter, a GaN-based high-power (HP) single-chip (SC) large-area LED with parallel and series network structure is fabricated. The optical characteristics of the HP-SC LED is investigated. Driven at 600 mA, the optical output power of the HP-SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light-extraction efficiency degradation and the self-heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP-SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large-area LEDs.
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