Abstract:Light-emitting diodes (LEDs) are used widely, but when operated on low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert alternating current (AC). DC flow across devices also causes charge accumulation under high current density, leading to lowered LED reliability. By contrast, gallium-nitride-based LEDs can be operated without an AC–DC converter being required, potentially leading to greater energy efficiency and reliability. This study developed a multicolor AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP–GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of the hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity–voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag–WSe2 monolayer interface under low voltage, whereas Fowler–Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. This multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in such applications as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting

High-output power GaN-LED based on surface plasmon enhancement

Single‐chip InGaN Green Light‐emitting Diodes with 3 W Optical Output Power

Demonstration of Wafer‐level White Light Emitting Diode with 92,000 Lm Luminous Flux

Wafer-Level Light Emitting Diode (WL-LED) Chip Simplified Package for Very-High Power Solid-State Lighting (SSL) Source

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

High efficiency InGaN nanowire tunnel junction green micro-LEDs

New Progress in wafer epitaxy technologies for high-brightness white LEDs

AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

Study of the White Light-emitting Diode and Its Integrated Lighting Source

Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

GaN-based Mid-Power Flip-Chip Light-Emitting Diode with High -3 Db Bandwidth for Visible Light Communications.

Optimized GaAs∕AlGaAs Light-Emitting Diodes and High Efficiency Wafer-Fused Optical Up-Conversion Devices

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

High-efficiency Vertical-Structure GaN-based Light-Emitting Diodes on Si Substrates