Semiconductor Yellow Light-Emitting Diodes
Jiang Feng-Yi,Liu Jun-Lin,Zhang Jian-Li,Xu Long-Quan,Ding Jie,Wang Guang-Xu,Quan Zhi-Jue,Wu Xiao-Ming,Zhao Peng,Liu Bi-Yu,Li Dan,Wang Xiao-Lan,Zheng Chang-Da,Pan Shuan,Fang,Mo Chun-Lan
DOI: https://doi.org/10.7498/aps.68.20191044
IF: 0.906
2019-01-01
Acta Physica Sinica
Abstract:The development of semiconductor light-emitting diode (LED) in the visible emission range is very unbalance, as the power efficiency of yellow LED is far below other colors. Based on the GaN/Si technology, the authors and his team made a systematic research from the aspect of material growth, chip fabrication, device physics and equipment design, resolved the problems of epi-film cracking, high dislocation density, large strain in quantum well (QW), phase separation in QW, low QW growth temperature, low hole concentration, light absorption by substrate and light blocking by electrode, successfully made a breakthrough in fabricating efficient yellow LED. The yellow LED chip achieves a power efficiency of 26.7% at 20 A/cm(2) with 565 nm wavelength and efficacy of 164 lm/W, and the power efficiency goes up to 42.8% at 1 A/cm(2) with 577 nm wavelength and efficacy of 248 lm/W. New LED light source with multi-colors and without phosphor was developed based on the efficient yellow LEDs, opened up a new direction of pure LED healthy lighting.