Fabrication and Characterization of High-power White LED

陈志忠,秦志新,胡晓东,于彤军,杨志坚,章蓓,姚光庆,邱秀敏,张国义
DOI: https://doi.org/10.3969/j.issn.1007-2780.2004.02.002
2004-01-01
Chinese Journal of Liquid Crystals and Displays
Abstract:In this work, the high power white lighting emitting diode(LED) were packaged on a anthropophagi lead by GaN-based blue LED chip in the size of 1 mm×1 mm and YAG∶Ce yellow fluorescence. Under the injection current of 200 mA,the luminous power is 13.8 mW, which is 10 times of the power of the diodes fabricated with the same LED wafer in normal size. The power does not show the trends of saturation or descent when the injection current is increased to 200 mA. However the color temperature is decreased from 5 300 to 4 800 K. The effect of ratio of phosphor mixture on chroma was also discussed.
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