Semipolar (11\bar 2\bar 2) ZnO Thin Films Grown on LaAlO3‐buffered LSAT (112) Single Crystals by Pulsed Laser Deposition

Jr-Sheng Tian,Chun-Yen Peng,Wei-Lin Wang,Yue-Han Wu,Yi-Sen Shih,Kun-An Chiu,Yen-Teng Ho,Ying-Hao Chu,Li Chang
DOI: https://doi.org/10.1002/pssr.201307037
2013-01-01
physica status solidi (RRL) - Rapid Research Letters
Abstract:Semipolar (11 (2) over bar(2) over bar) ZnO was successfully grown on (112) LaAlO3/(LaAlO3)(0.29)(Sr2AlTaO6)(0.35) substrate by pulsed laser deposition. The epitaxial relationship is [11 (2) over bar3](ZnO)// [11 (1) over bar](LAO/LSAT) with the polar axis of [000 (1) over bar](ZnO) pointing to the surface. For ZnO films with thickness of 1.6 mu m, the threading dislocation density is similar to 1 x 10(9) cm(-2), and the density of basal stacking faults is below 1 x 10(4) cm(-1). The (11 (2) over bar(2) over bar) ZnO exhibits strong (DX)-X-0 emissions with a FWHM of 9 meV and very few green-yellow emissions in the low-temperature (10 K) and room-temperature photoluminescence spectra, respectively.The XRD 2 theta-theta pattern of 1.6 mu m ZnO films grown on (112) LaAlO3/LSAT only reveals a sharp (11 (2) over bar(2) over bar) ZnO reflection for ZnO. The inset figure is the XRD rocking curve of (11 (2) over bar(2) over bar) ZnO with a FWHM of 0.084 degrees. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
What problem does this paper attempt to address?