Novel Covalent-Organometallic Polymer for Highly Stable Nano-Resistive Switching Memories
Yan Qing,Cui Xiaosheng,He Haidong,El-Khouly Mohamed,Zhang Bin,Chen Yu
DOI: https://doi.org/10.1007/s42114-022-00598-w
IF: 11.806
2023-01-01
Advanced Composites and Hybrid Materials
Abstract:Random resistive switching characteristics observed in the polymer-based electronic devices usually result from the structural inhomogeneity of materials, giving rise to decrease of the reliability and production yield of nanoscale devices. To address these problems, a novel covalent-organometallic polymer, poly(TPP-Fe), has been synthesized through liquid–liquid interface polymerization reaction of 4,4′′-(5′′-(4′-([2,2′:6′,2′′-terpyridin]-4′-yl)-[1,1′-biphenyl]-4-yl)-[1,1′:4′,1′′:3′′,1′′′:4′′′,1′′′′-quinquephenyl]-4,4′′′′-diyl)bis(6-(pyridin-2-yl)-2,2′-bipyridine) (TPP) in the presence of FeCl2. The as-fabricated Al/poly(TPP-Fe)/ITO device, which shows homogeneous switching across the entire material layer, and nonvolatile resistive switching memory effect, with turn-on/off voltages of − 0.47/2.41 V and almost 100% production yield, exhibits remarkable stability, repeatability, and excellent spatial uniformity. Both the cycle-to-cycle and device-to-device variations for the programming voltages are less than 15%. The reliability of the poly(TPP-Fe) film–based device is greatly enhanced by the delocalized resistive switching, making downscaling of the device into 10-nm scale possible for RRAM applications.