Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films
Bing Sun,Xinle Li,Tiantian Feng,Songliang Cai,Teresa Chen,Chenhui Zhu,Jian Zhang,Dong Wang,Yi Liu
DOI: https://doi.org/10.1021/acsami.0c15789
2020-11-09
Abstract:Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4′,4″-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and −2.64 V on the negative scan. A high ON/OFF current ratio (>10<sup>6</sup> for the positive scan and 10<sup>4</sup>–10<sup>6</sup> for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor–acceptor system, which provided the effective charge-transfer channels for injected charge carriers. This work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c15789?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c15789</a>.Supplementary characterization of the PI-NT COF film including FTIR spectra, PXRD patterns, solid-state <sup>13</sup>C-NMR spectrum, and AFM topographic images; additional resistive switching performance of COF-based memory devices; and comparison of resistive memory performance to the previous works (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15789/suppl_file/am0c15789_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology