Nonvolatile Bistable Resistive Switching in A New Polyimide Bearing 9-Phenyl-9h-carbazole Pendant

Benlin Hu,Fei Zhuge,Xiaojian Zhu,Shanshan Peng,Xinxin Chen,Liang Pan,Qing Yan,Run-Wei Li
DOI: https://doi.org/10.1039/c1jm13849a
2012-01-01
Journal of Materials Chemistry
Abstract:A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,4'-di(N-benzyloxycarbazole)-3,3'-biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHP-PC PI), has been designed as a functional material for resistance memory devices. The ITO/6F-BAHP-PC PI/Ag memory device exhibits nonvolatile resistive switching (RS) with a high ON/OFF ratio (>10(6)), long retention time (>6 x 10(4) s), good endurance, and low power consumption (similar to 100 mu W). In situ conductive atomic force microscopy measurements show that the RS of 6F-BAHP-PC PI originates from the formation/rupture of nanoscale conducting filaments.
What problem does this paper attempt to address?