Abstract:The mechanism behind electrical memory behavior of carbazole-containing polyimides (PIs) in nanoscale thin films was investigated. For this investigation, a series of poly(3,3'-dihydroxy-4,4'-biphenylene-co-3,3'-bis(N-ethylenyloxycarbazole)-4,4'-biphenylene hexafluoro-isopropylidenedi-phthalimide)s (6F-HAB-HABCZn PIs) with various compositions was synthesized as a model carbazole-containing polymer system. The thermal properties, band gaps, and molecular orbital levels of the PIs were determined. Furthermore, the chemical compositions, as well as the nanoscale thin film morphologies and electron densities, were analyzed, providing detailed information on the population and positional distribution of carbazole moieties in thin films of the PIs. PI Devices were fabricated with aluminum electrodes and tested electrically. The PI thin film layers in the devices exhibited electrically permanent memory behavior, which was driven by trap-limited space-charge limited conduction and ohmic conduction. The permanent memory characteristics were found to be attributed to the incorporated carbazole moieties rather than from the other chemical components. Furthermore, the memory characteristics depended significantly on the population and positional distribution of carbazole moieties in the PI layer, as well as the film thickness. Considering that the backbone is not conjugated, the present results collectively indicate that the electrical switching behavior of the PI films is driven by the carbazole moieties acting as charge traps and a hopping process using the carbazole charge-trap sites as stepping-stones.

Volatile Electrical Switching in a Functional Polyimide Containing Electron-Donor and -Acceptor Moieties

Volatile Electrical Switching and Static Random Access Memory Effect in a Functional Polyimide Containing Oxadiazole Moieties

Nonvolatile Electrical Switching and Write-Once Read-Many-Times Memory Effects in Functional Polyimides Containing Triphenylamine and 1,3,4-Oxadiazole Moieties

Nonvolatile electrical switching behavior and mechanism of functional polyimides bearing a pyrrole unit: influence of different side groups

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Resistive switching characteristics of polyimides derived from 2,2'-aryl substituents tetracarboxylic dianhydrides

Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups

Nonvolatile Bistable Resistive Switching in A New Polyimide Bearing 9-Phenyl-9h-carbazole Pendant

Improving Resistive Switching Characteristics of Polyimide-Based Volatile Memory Devices by Introducing Triphenylamine Branched Structures

Synthesis and Dynamic Random Access Memory Behavior of a Functional Polyimide.

Synthesis of Polyimides Containing Triphenylamine‐substituted Triazole Moieties for Polymer Memory Applications

Tristable Electrical Conductivity Switching in a Polyfluorene–diphenylpyridine Copolymer with Pendant Carbazole Groups

Clues to the electrical switching mechanism of carbazole-containing polyimide thin films

Synthesis and memory characteristics of highly organo-soluble polyimides bearing a noncoplanar twisted biphenyl unit containing aromatic side-chain groups

Synthesis and resistive switching characteristics of polyimides derived from 2,7-aryl substituents tetraphenyl fluorene diamines

High-Performance Optoelectrical Dual-Mode Memory Based on Spiropyran-Containing Polyimide

Synthesis and Memory Characteristics of Polyimides Containing Noncoplanar Aryl Pendant Groups

Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments

Bistable Electrical Switching and Memory Effects in a Thin Film of Copolymer Containing Electron Donor-Acceptor Moieties and Europium Complexes.

Ternary Memory Property of Novel Polyimide with Backbone Carbazole Moiety and Pendant Triphenylamine Moiety

Distinct Electronic Switching Behaviors of Triphenylamine-Containing Polyimide Memories with Different Bottom Electrodes