Abstract:The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE). A solution processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in an insulating polyvinyl alcohol (PVA) matrix and polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has been studied by using flexible polyethylene terephthalate (PET) substrates. The current-voltage (I-V) measurements of hybrid Al/ZnO-PVA/PEDOT:PSS/Al/flexible PET substrate device exhibited a non-volatile bistable resistive switching behaviour, which is attributed to the trapping, storage and transport of charges in the electronic states of the ZnO nanoparticles. The performance of hybrid device is significantly enhanced over control Al/PEDOT:PSS/Al and Al/ZnO-PVA/Al devices due the presence of PEDOT:PSS polymer. This PEDOT:PSS improves the performance of oxygen ions (holes) migration toward BE and protect back oxygen vacancies (electrons) migrate toward BE from ZnO-PVA composites which may reduces the leakage current, as a result, increased the 'ON state/OFF state' current ratio of 7.9 × 103 times. The fabricated hybrid device showed high ON/OFF switching current ratio larger than five orders of magnitude with low operating voltages. It is observed that, the existence of two conducting states, namely, low conductivity state (OFF state) and high conductivity state (ON state), exhibiting bistable behaviour. The state of the device was maintained even after removal of the applied bias, indicating the non-volatile memory. The observed current-time response showed good memory retention behaviour of the fabricated devices. The excellent stability and retention performances of hybrid device verify the reliability of this device and demonstrate their potential for application in non-volatile bistable memory device. The carrier transport mechanism of the bistable behaviour for the fabricated non-volatile organic bistable devices structures is described on the basis of the I-V experimental results by analyzing the effect of space charge and electronic structure. Interestingly, the device performance was not degraded and remains identical even after bending the device from 60-120° angles, which indicates high potential for flexible non-volatile bistable memory device applications. This demonstration provides a class of memory devices with the potential for future flexible electronics applications.

Modulating Resistive Switching By Diluted Additive Of Poly(Vinylpyrrolidone) In Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate)

Ac Electrodeposition Of Pedot Films In Protic Ionic Liquids For Long-Term Stable Organic Electrochemical Transistors

Resistive Switching Induced by Metallic Filaments Formation Through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)

Reproducible And Controllable Organic Resistive Memory Based On Al/Poly(3,4-Ethylene-Dioxythiophene):Poly(Styrenesulfonate)/Al Structure

Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) thin film

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Structural effect on controllable resistive memory switching in donor–acceptor polymer systems

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Modulating the Electrochromic Performances of Transmissive and Reflective Devices Using N, N-Dimethyl Formamide Modified Poly(3,4-Ethylenedioxythiophene)/Poly(Styrene Sulfonate) Blend As Active Layers

Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)

Polyethylene-Glycol-Modified Halide Perovskite for Enhancing the Switching Ratio and Cycling Stability of Resistive Random Access Memory

Improving Resistive Switching Characteristics of Polyimide-Based Volatile Memory Devices by Introducing Triphenylamine Branched Structures

Influence of Poly(Methyl Metacrylate) Addition on Resistive Switching Performance of P3ht/P(Vdf-Trfe) Blend Films

Bipolar resistive switching in MAPbI[math]Cl[math] mixed halide perovskite with polyvinylpyrrolidone additives

High Performance Resistive Switching Memory Organic Films Prepared Through PPy Growing on Graphene Oxide Substrate

Simultaneously Elevating the Resistive Switching Level and Ambient-Air-stability of 3D Perovskite (Taz-H)pbbr3-based Memory Device by Encapsulating into Polyvinylpyrrolidone.

Volatile Electrical Switching and Static Random Access Memory Effect in a Functional Polyimide Containing Oxadiazole Moieties

Effect of a PEDOT:PSS Modified Layer on the Electrical Characteristics of Flexible Memristive Devices Based on Graphene Oxide:Polyvinylpyrrolidone Nanocomposites

Structural Effect On The Resistive Switching Behavior Of Triphenylamine-Based Poly(Azomethine)S

Modulating the Photoresponse of Transistor Memory with Perovskite Nanocrystals/Polyamic Acid As a Floating Gate

Resistive Switching Effect of N-doped MoS2-PVP Nanocomposites Films for Nonvolatile Memory Devices